Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate

Fonrodona Turon, MartaSoler Vilamitjana, DavidEscarré i Palou, JordiVillar, FernandoBertomeu i Balagueró, JoanAndreu i Batallé, JordiSaboundji, A.Coulon, N.Mohammed-Brahim, T.2013-10-252013-10-2520060040-6090https://hdl.handle.net/2445/47298Amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor Deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO 2. Amorphous silicon devices exhibited mobility values of 1.3 cm 2 V - 1 s - 1, which are very high taking into account the amorphous nature of the material. Nanocrystalline transistors presented mobility values as high as 11.5 cm 2 V - 1 s - 1 and resulted in low threshold voltage shift (∼ 0.5 V).13 p.application/pdfeng(c) Elsevier B.V., 2006TransistorsPel·lícules finesSiliciNanocristallsDeposició química en fase vaporTransistorsThin filmsSiliconNanocrystalsChemical vapor depositionLow temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrateinfo:eu-repo/semantics/article5251912013-10-25info:eu-repo/semantics/openAccess