Dellunde i Clavé, JaumeMirasso Santos, Claudio RubénTorrent, M. C. (Maria Carme)Sancho, José M.2009-06-032009-06-0319980018-9383https://hdl.handle.net/2445/8504The performance of a device based on modified injection-locking techniques is studied by means of numerical simulations. The device incorporates master and slave configurations, each one with a DFB laser and an electroabsortion modulator (EAM). This arrangement allows the generation of high peak power, narrow optical pulses according to a periodic or pseudorandom bit stream provided by a current signal generator. The device is able to considerably increase the modulation bandwidth of free-running gain-switched semiconductor lasers using multiplexing in the time domain. Opportunities for integration in small packages or single chips are discussed.9 p.application/pdfeng(c) IEEE, 1998Dispositius optoelectrònicsImpulsos de làser ultracurtsOptoelectronic devicesUltrashort laser pulsesinfo:eu-repo/semantics/article142298info:eu-repo/semantics/openAccess