Bertomeu i Balagueró, JoanPuigdollers i González, JoaquimAsensi López, José MiguelAndreu i Batallé, Jordi2013-11-052013-11-0519930022-3093https://hdl.handle.net/2445/47504This paper deals with the determination of the interface density of states in amorphous silicon-based multilayers. Photothermal deflection spectroscopy is used to characterize two series of aSi:H/aSi1-xCx:H multilayers, and a new approach in the treatment of experimental dada is used in order to obtain accurate results. From this approach, an upper limit of 10^10 cm-2 is determined for the interface density of states.6 p.application/pdfeng(c) Elsevier B.V., 1993Semiconductors amorfsOptoelectrònicaEspectroscòpiaSiliciSemimetallsAmorphous semiconductorsOptoelectronicsSpectrum analysisSiliconSemimetalsinfo:eu-repo/semantics/article0884312013-11-05info:eu-repo/semantics/openAccess