Bowen, M.Cros, V.Petroff, F.Fert, Albert, 1938-Martínez Boubeta, José CarlosCosta Krämer, José LuisAnguita, José VirgilioCebollada, AlfonsoBriones Fernández-Pola, FernandoTeresa, J. M. deMorellon, L.Ibarra, M. R.Güell Vilà, FrankPeiró Martínez, FranciscaCornet i Calveras, Albert2013-02-082013-02-0820010003-6951https://hdl.handle.net/2445/33761We present tunneling experiments on Fe~001!/MgO~20 Å!/FeCo~001! single-crystal epitaxial junctions of high quality grown by sputtering and laser ablation. Tunnel magnetoresistance measurements give 60% at 30 K, to be compared with 13% obtained recently on ~001!-oriented Fe/amorphous-Al2O3 /FeCo tunnel junctions. This difference demonstrates that the spin polarization of tunneling electrons is not directly related to the density of states of the free metal surface Fe~001! in this case but depends on the actual electronic structure of the entire electrode/barrier system.3 p.application/pdfeng(c) American Institute of Physics , 2001MagnetoresistènciaDispositius de memòria d'ordinadorMicroelectrònicaEfecte túnelFerroMagnetoresistanceComputer storage devicesMicroelectronicsTunneling (Physics)Ironinfo:eu-repo/semantics/article5431272013-02-08info:eu-repo/semantics/openAccess