Martorell Domenech, JuanSprung, Donald W. L.2009-11-032009-11-0319940163-1829https://hdl.handle.net/2445/9945An optimized self-consistent method for determination of the quantal electron density is presented. It is applied, in the zero-temperature case, to devices with either partial or full donor ionization. A Thomas-Fermi approximation for the T=0 limit is developed and shown to be appropriate for systematic studies of the two-dimensional electron density, σ − . A suitable linear approximation is found that provides simple and accurate analytic expressions for σ − in terms of the physical parameters of the device.10 p.application/pdfeng(c) The American Physical Society, 1994Electrònica quànticaFísica de l'estat sòlidQuantum electronicsSolid state physicsDetermination of the electron density in GaAs/AlxGa1-xAs heterostructuresinfo:eu-repo/semantics/article88046info:eu-repo/semantics/openAccess