Gacevic, ZarkoFernández-Garrido, S.Rebled, J. M. (José Manuel)Estradé Albiol, SòniaPeiró Martínez, FranciscaCalleja Pardo, Enrique2012-11-202012-11-2020110003-6951https://hdl.handle.net/2445/32769We report on properties of high quality 60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be 61.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution.4 p.application/pdfeng(c) American Institute of Physics , 2011OptoelectrònicaSemiconductorsEstructura cristal·lina (Sòlids)Indi (Metall)OptoelectronicsSemiconductorsLayer structure (Solids)Indiuminfo:eu-repo/semantics/article5975772012-11-20info:eu-repo/semantics/openAccess