Peiró Martínez, FranciscaEstradé Albiol, SòniaRuiz Caridad, Alicia2014-11-172014-11-172014-09https://hdl.handle.net/2445/59729Treballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Any: 2014, Tutores: Francesca Peiró Martínez i Sonia Estradé AlbiolEr-doped silicon nanocrystal-based oxides/nitrides have been investigated. These layers are grown between a polycrystalline silicon electrode and a monocrystalline silicon substrate to allow electrical injection. Energy Filtered (EF-) and High Resolution (HR-) TEM characterization has been performed to provide microscopic insight onto the macroscopic optoelectronic properties of the samples. Evident Er-clustering has been observed in silicon dioxides but not in silicon nitrides, suggesting a better Er solubility and local environment when nitrogen is incorporated. Silicon nanocrystals have been observed in silicon-rich nitride layers, as expected, but also in a region close to the silicon dioxide-polysilicon interface in a layer with no nitrogen or Si excesses. This unexpected Si clusterization has been attributed to Si diffusion from the polycrystalline silicon electrode into the silicon dioxide as a consequence of the annealing treatment. The structural characterization carried out by HRTEM and EFTEM has been correlated with the optoelectronic properties of the devices.5 p.application/pdfengcc-by-nc-nd (c) Massana Melchor, 2014http://creativecommons.org/licenses/by-nc-nd/3.0/es/Nanocristalls semiconductorsPropietats elèctriquesTreballs de fi de grauSemiconductor nanocrystalsElectric propertiesBachelor's thesesinfo:eu-repo/semantics/bachelorThesisinfo:eu-repo/semantics/openAccess