Prtljaga, NikolaNavarro Urrios, DanielPitanti, AlessandroFerrarese Lupi, FedericoGarrido Fernández, BlasPavesi, Lorenzo2012-07-052012-07-052012-05-100021-8979https://hdl.handle.net/2445/28443The sensitizing action of amorphous silicon nanoclusters on erbium ions in thin silica films has been studied under low-energy (long wavelength) optical excitation. Profound differences in fast visible and infrared emission dynamics have been found with respect to the high-energy (short wavelength) case. These findings point out to a strong dependence of the energy transfer process on the optical excitation energy. Total inhibition of energy transfer to erbium states higher than the first excited state (4I13/2) has been demonstrated for excitation energy below 1.82 eV (excitation wavelength longer than 680 nm). Direct excitation of erbium ions to the first excited state (4I13/2) has been confirmed to be the dominant energy transfer mechanism over the whole spectral range of optical excitation used (540 nm¿680 nm).5 p.application/pdfeng(c) American Institute of Physics, 2012FotònicaSiliciNanocristallsPhotonicsSiliconNanocrystalsinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/openAccess