Fonrodona Turon, MartaSoler Vilamitjana, DavidVillar, FernandoEscarré i Palou, JordiAsensi López, José MiguelBertomeu i Balagueró, JoanAndreu i Batallé, Jordi2013-10-252013-10-2520060040-6090https://hdl.handle.net/2445/47300Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime close to the transition to amorphous growth (around 60% of amorphous volume fraction), cells incorporating an intrinsic layer with slightly higher crystalline fraction and [220] preferential orientation are stable after more than 7000 h of AM1.5 light soaking. On the contrary, solar cells whose intrinsic layer has a slightly lower crystalline fraction and random or [111] preferential orientation exhibit clear light-induced degradation effects. A revision of the efficiencies of Hot-Wire deposited microcrystalline silicon solar cells is presented and the potential efficiency of this technology is also evaluated.17 p.application/pdfeng(c) Elsevier B.V., 2006Cèl·lules solarsSiliciDeposició química en fase vaporEnergia solarSolar cellsSiliconChemical vapor depositionSolar energyinfo:eu-repo/semantics/article5251922013-10-25info:eu-repo/semantics/openAccess