Kail, F.Farjas Silva, JordiRoura Grabulosa, PereSecouard, C.Nos Aguilà, OriolBertomeu i Balagueró, JoanRoca i Cabarrocas, P. (Pere)2016-04-292016-04-292011-09-191862-6254https://hdl.handle.net/2445/98045The crystallization enthalpy of pure amorphous silicon (a-Si) and hydrogenated a-Si was measured by differential scanning calorimetry (DSC) for a large set of materials deposited from the vapour phase by different techniques. Although the values cover a wide range (200-480 J/g), the minimum value is common to all the deposition techniques used and close to the predicted minimum strain energy of relaxed a-Si (240 ± 25 J/g). This result gives a reliable value for the configurational energy gap between a-Si and crystalline silicon. An excess of enthalpy above this minimum value can be ascribed to coordination defects.6 p.application/pdfeng(c) Wiley-VCH, 2011SiliciCristal·litzacióEntalpiaCalorimetriaSiliconCrystallizationEnthalpyCalorimetryinfo:eu-repo/semantics/article5990252016-04-29info:eu-repo/semantics/openAccess