Muñoz, D.Carreras Seguí, PazEscarré i Palou, JordiIbarz, D.Martín de Nicolás, S.Voz Sánchez, CristóbalAsensi López, José MiguelBertomeu i Balagueró, Joan2013-10-252013-10-2520090040-6090https://hdl.handle.net/2445/47284In this work, we have studied the texturization process of (100) c-Si wafers using a low concentration potassium hydroxide solution in order to obtain good quality textured wafers. The optimization of the etching conditions have led to random but uniform pyramidal structures with good optical properties. Then, symmetric heterojunctions were deposited by Hot-Wire CVD onto these substrates and the Quasi-Steady-State PhotoConductance technique was used to measure passivation quality. Little degradation in the effective lifetime and implicit open circuit voltage of these devices (< 20 mV) was observed in all cases. It is especially remarkable that for big uniform pyramids, the open-circuit voltage is comparable to the values obtained on flat substrates.14 p.application/pdfeng(c) Elsevier B.V., 2009Deposició química en fase vaporCèl·lules solarsTeoria quànticaPropietats òptiquesAiguafortChemical vapor depositionSolar cellsQuantum theoryOptical propertiesEtchinginfo:eu-repo/semantics/article5611412013-10-25info:eu-repo/semantics/openAccess