Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/104266
Title: Structural and optical properties of Al-Tb/SiO2 multilayers fabricated by electron beam evaporation
Author: Blázquez, O. (Oriol)
López-Vidrier, J.
López-Conesa, Lluís
Busquets Masó, Martí
Estradé Albiol, Sònia
Peiró Martínez, Francisca
Hernández Márquez, Sergi
Garrido Fernández, Blas
Keywords: Nanoestructures
Evaporació
Propietats òptiques
Feixos electrònics
Nanostructures
Evaporation
Optical properties
Electron beams
Issue Date: 4-Oct-2016
Publisher: American Institute of Physics
Abstract: Light emitting Al-Tb/SiO2 nanomultilayers (NMLs) for optoelectronic applications have been produced and characterized. The active layers were deposited by electron beam evaporation onto crystalline silicon substrates, by alternatively evaporating nanometric layers of Al, Tb, and SiO2. After deposition, all samples were submitted to an annealing treatment for 1 h in N2 atmosphere at different temperatures, ranging from 700 to 1100 °C. Transmission electron microscopy confirmed the NML structure quality, and by complementing the measurements with electron energy-loss spectroscopy, the chemical composition of the multilayers was determined at the nanoscopic level. The average composition was also measured by X-ray photoelectron spectroscopy (XPS), revealing that samples containing Al are highly oxidized. Photoluminescence experiments exhibit narrow emission lines ascribed to Tb3+ ions in all samples (both as-deposited and annealed ones), together with a broadband related to SiO2 defects. The Tb-related emission intensity in the sample annealed at 1100 °C is more than one order of magnitude higher than identical samples without Al. These effects have been ascribed to the higher matrix quality, less SiO2 defects emitting, and a better Tb3+ configuration in the SiO2 matrix thanks to the higher oxygen content favored by the incorporation of Al atoms, as revealed by XPS experiments.
Note: Reproducció del document publicat a: https://doi.org/10.1063/1.4964110
It is part of: Journal of Applied Physics, 2016, vol. 120, p. 135302-135302
Related resource: https://doi.org/10.1063/1.4964110
URI: http://hdl.handle.net/2445/104266
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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