 |
|||||||
|
|||||||
|
Dipòsit Digital de la UB > Recerca > Electrònica >
|
Lliuraments recentsConfigurational statistical model for the damaged structure of silicon oxide after ion implantation Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaP Composition modulation and inhomogeneous strain field in InxGa1-xAs/InP strained layers Model for the emission of Si+ ions during oxygen bombardment of Si(100) surfaces
Recurs RSS
|
||||||||||||||||||||||||||||||||||||||||||
|
||||||||||||||||||||||||||||||||||||||||||||
