Please use this identifier to cite or link to this item:
Title: Electrical properties of individual tin oxide nanowires contacted to platinum electrodes
Author: Hernández Ramírez, Francisco
Tarancón Rubio, Albert
Casals Guillén, Olga
Pellicer, E.
Rodríguez, J.
Romano Rodríguez, Alberto
Morante i Lleonart, Joan Ramon
Barth, S.
Mathur, S.
Keywords: Superconductivitat
Electronic structure and electrical properties of surfaces
Issue Date: 2007
Publisher: The American Physical Society
Abstract: A simple and useful experimental alternative to field-effect transistors for measuring electrical properties free electron concentration nd, electrical mobility , and conductivity in individual nanowires has been developed. A combined model involving thermionic emission and tunneling through interface states is proposed to describe the electrical conduction through the platinum-nanowire contacts, fabricated by focused ion beam techniques. Current-voltage I-V plots of single nanowires measured in both two- and four-probe configurations revealed high contact resistances and rectifying characteristics. The observed electrical behavior was modeled using an equivalent circuit constituted by a resistance placed between two back-to-back Schottky barriers, arising from the metal-semiconductor-metal M-S-M junctions. Temperature-dependent I-V measurements revealed effective Schottky barrier heights up to BE= 0.4 eV.
Note: Reproducció digital del document publicat en format paper, proporcionada per PROLA i
It is part of: Physical Review B, 2007, vol. 76, núm. 8, p. 085429-1-085429-5
Related resource:
ISSN: 0163-1829
Appears in Collections:Articles publicats en revistes (Electrònica)

Files in This Item:
File Description SizeFormat 
552731.pdf354.95 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.