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http://hdl.handle.net/2445/10641
Title: | Calorimetry of hydrogen desorption from a-Si nanoparticles |
Author: | Farjas Silva, Jordi Das, D. Fort, J. Roura Grabulosa, Pere Bertrán Serra, Enric |
Keywords: | Ciència dels materials Semiconductors amorfs Pel·lícules fines Structure of solids and liquids Materials science Surfaces and interfaces Thin films |
Issue Date: | 2002 |
Publisher: | The American Physical Society |
Abstract: | The process of hydrogen desorption from amorphous silicon (a-Si) nanoparticles grown by plasma-enhanced chemical vapor deposition (PECVD) has been analyzed by differential scanning calorimetry (DSC), mass spectrometry, and infrared spectroscopy, with the aim of quantifying the energy exchanged. Two exothermic peaks centered at 330 and 410 C have been detected with energies per H atom of about 50 meV. This value has been compared with the results of theoretical calculations and is found to agree with the dissociation energy of Si-H groups of about 3.25 eV per H atom, provided that the formation energy per dangling bond in a-Si is about 1.15 eV. It is shown that this result is valid for a-Si:H films, too. |
Note: | Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.65.115403 |
It is part of: | Physical Review B, 2002, vol. 65, num. 11, p. 115403-115407 |
URI: | http://hdl.handle.net/2445/10641 |
Related resource: | http://dx.doi.org/10.1103/PhysRevB.65.115403 |
ISSN: | 0163-1829 |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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