Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/10641
Title: Calorimetry of hydrogen desorption from a-Si nanoparticles
Author: Farjas Silva, Jordi
Das, D.
Fort, J.
Roura Grabulosa, Pere
Bertrán Serra, Enric
Keywords: Ciència dels materials
Semiconductors amorfs
Pel·lícules fines
Structure of solids and liquids
Materials science
Surfaces and interfaces
Thin films
Issue Date: 2002
Publisher: The American Physical Society
Abstract: The process of hydrogen desorption from amorphous silicon (a-Si) nanoparticles grown by plasma-enhanced chemical vapor deposition (PECVD) has been analyzed by differential scanning calorimetry (DSC), mass spectrometry, and infrared spectroscopy, with the aim of quantifying the energy exchanged. Two exothermic peaks centered at 330 and 410 C have been detected with energies per H atom of about 50 meV. This value has been compared with the results of theoretical calculations and is found to agree with the dissociation energy of Si-H groups of about 3.25 eV per H atom, provided that the formation energy per dangling bond in a-Si is about 1.15 eV. It is shown that this result is valid for a-Si:H films, too.
Note: Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.65.115403
It is part of: Physical Review B, 2002, vol. 65, num. 11, p. 115403-115407
URI: http://hdl.handle.net/2445/10641
ISSN: 0163-1829
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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