Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/107590
Title: Quantitative parameters for the examination of InGaN QW multilayers by low-loss EELS
Author: Eljarrat Ascunce, Alberto
López Conesa, Lluís
Magén, César
García-Lepetit, Noemí
Gacevic, Zarko
Calleja Pardo, Enrique
Peiró Martínez, Francisca
Estradé Albiol, Sònia
Keywords: Espectroscòpia de pèrdua d'energia d'electrons
Pous quàntics
Microscòpia electrònica de transmissió
Electron energy loss spectroscopy
Quantum wells
Transmission electron microscopy
Issue Date: 2-Aug-2016
Publisher: Royal Society of Chemistry
Abstract: We present a detailed examination of a multiple InxGa1−xN quantum well (QW) structure for optoelectronic applications. The characterization is carried out using scanning transmission electron microscopy (STEM), combining high-angle annular dark field (HAADF) imaging and electron energy loss spectroscopy (EELS). Fluctuations in the QW thickness and composition are observed in atomic resolution images. The impact of these small changes on the electronic properties of the semiconductor material is measured through spatially localized low-loss EELS, obtaining band gap and plasmon energy values. Because of the small size of the InGaN QW layers additional effects hinder the analysis. Hence, additional parameters were explored, which can be assessed using the same EELS data and give further information. For instance, plasmon width was studied using a model-based fit approach to the plasmon peak; observing a broadening of this peak can be related to the chemical and structural inhomogeneity in the InGaN QW layers. Additionally, Kramers-Kronig analysis (KKA) was used to calculate the complex dielectric function (CDF) from the EELS spectrum images (SIs). After this analysis, the electron effective mass and the sample absolute thickness were obtained, and an alternative method for the assessment of plasmon energy was demonstrated. Also after KKA, the normalization of the energy-loss spectrum allows us to analyze the Ga 3d transition, which provides additional chemical information at great spatial resolution. Each one of these methods is presented in this work together with a critical discussion of their advantages and drawbacks.
Note: Reproducció del document publicat a: https://doi.org/10.1039/C6CP04493J
It is part of: Physical Chemistry Chemical Physics, 2016, vol. 18, num. 33, p. 23264-23276
Related resource: https://doi.org/10.1039/C6CP04493J
URI: http://hdl.handle.net/2445/107590
ISSN: 1463-9076
Appears in Collections:Articles publicats en revistes (Electrònica)

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