Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/113834
Title: Polarized Raman scattering study of kesterite type Cu2ZnSnS4 single crystals
Author: Guc, Maxim
Levcenko, Sergiu
Bodnar, Ivan V.
Izquierdo Roca, Victor
Fontané Sánchez, Xavier
Volkova, Larisa V.
Arushanov, Ernest
Pérez Rodríguez, Alejandro
Keywords: Espectroscòpia Raman
Cristal·lografia
Pel·lícules fines
Raman spectroscopy
Crystallography
Thin films
Issue Date: 2016
Publisher: Nature Publishing Group
Abstract: A non-destructive Raman spectroscopy has been widely used as a complimentary method to X-ray diffraction characterization of Cu2ZnSnS4 (CZTS) thin films, yet our knowledge of the Raman active fundamental modes in this material is far from complete. Focusing on polarized Raman spectroscopy provides important information about the relationship between Raman modes and CZTS crystal structure. In this framework the zone-center optical phonons of CZTS, which is most usually examined in active layers of the CZTS based solar cells, are studied by polarized resonant and non-resonant Raman spectroscopy in the range from 60 to 500 cm(-1) on an oriented single crystal. The phonon mode symmetry of 20 modes from the 27 possible vibrational modes of the kesterite structure is experimentally determined. From in-plane angular dependences of the phonon modes intensities Raman tensor elements are also derived. Whereas a strong intensity enhancement of the polar E and B symmetry modes is induced under resonance conditions, no mode intensity dependence on the incident and scattered light polarization configurations was found in these conditions. Finally, Lyddane-Sachs-Teller relations are applied to estimate the ratios of the static to high-frequency optic dielectric constants parallel and perpendicular to c-optical axis.
Note: Reproducció del document publicat a: https://doi.org/10.1038/srep19414
It is part of: Scientific Reports, 2016, vol. 6, p. 19414
Related resource: https://doi.org/10.1038/srep19414
URI: http://hdl.handle.net/2445/113834
ISSN: 2045-2322
Appears in Collections:Articles publicats en revistes (Electrònica)

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