Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/13168
Title: | Strain-induced quenching of optical transitions in capped self-assembled quantum dot structures |
Author: | Prieto, J. A. Armelles Reig, G. Utzmeier, Thomas Briones Fernández-Pola, Fernando Ferrer, J. C. Peiró Martínez, Francisca Cornet i Calveras, Albert Morante i Lleonart, Joan Ramon |
Keywords: | Matèria condensada Propietats òptiques Electrònica quàntica Condensed matter Quantum electronics Optical properties |
Issue Date: | 1998 |
Publisher: | American Physical Society |
Abstract: | Strain-induced quenching of optical transitions has been found in capped self-assembled quantum dot structures. Light absorption at the E 1 and E 1 + Δ 1 critical points of InSb islands buried in InP disappears for nominal InSb thicknesses lower than 10 monolayers as a consequence of the strain produced inside the islands by the cap layer. Certainly, this strain increases as the InSb deposition diminishes, changing the band lineup of the system from type-I to type-II and therefore drastically reducing the oscillator strengths of the island-related E 1 and E 1 + Δ 1 transitions. |
Note: | Reproducció digital del document proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevLett.80.1094 |
It is part of: | Physical Review Letters, 1998, vol. 80, núm. 5, p. 1094-1097 |
URI: | http://hdl.handle.net/2445/13168 |
Related resource: | http://dx.doi.org/10.1103/PhysRevLett.80.1094 |
ISSN: | 0031-9007 |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
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129014.pdf | 433 kB | Adobe PDF | View/Open |
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