Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/13168
Title: Strain-induced quenching of optical transitions in capped self-assembled quantum dot structures
Author: Prieto, J. A.
Armelles Reig, G.
Utzmeier, Thomas
Briones Fernández-Pola, Fernando
Ferrer, J. C.
Peiró Martínez, Francisca
Cornet i Calveras, Albert
Morante i Lleonart, Joan Ramon
Keywords: Matèria condensada
Propietats òptiques
Electrònica quàntica
Condensed matter
Quantum electronics
Optical properties
Issue Date: 1998
Publisher: American Physical Society
Abstract: Strain-induced quenching of optical transitions has been found in capped self-assembled quantum dot structures. Light absorption at the E 1 and E 1 + Δ 1 critical points of InSb islands buried in InP disappears for nominal InSb thicknesses lower than 10 monolayers as a consequence of the strain produced inside the islands by the cap layer. Certainly, this strain increases as the InSb deposition diminishes, changing the band lineup of the system from type-I to type-II and therefore drastically reducing the oscillator strengths of the island-related E 1 and E 1 + Δ 1 transitions.
Note: Reproducció digital del document proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevLett.80.1094
It is part of: Physical Review Letters, 1998, vol. 80, núm. 5, p. 1094-1097
Related resource: http://dx.doi.org/10.1103/PhysRevLett.80.1094
URI: http://hdl.handle.net/2445/13168
ISSN: 0031-9007
Appears in Collections:Articles publicats en revistes (Electrònica)

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