Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/142071
Title: Role of aluminum and HMTA in the hydrothermal synthesis of two-dimensional n-doped ZnO nanosheets
Author: Murillo, Gonzalo
León-Salguero, Edgardo
Martínez-Alanis, Paulina R. na
Esteve, Jaume
Alvarado-Rivera, Josefina
Güell Vilà, Frank
Keywords: Alumini
Òxid de zinc
Nanocristalls
Aluminum
Zinc oxide
Nanocrystals
Issue Date: 6-Apr-2019
Publisher: Elsevier
Abstract: This work reports the study of the processes behind the growth of two-dimensional (2D) n-doped ZnO nanostructures on an AlN layer. We have demonstrated that AlN undergoes a slow dissociation process due to the basic controlled environment promoted by the hexamethylenetetramine (HMTA). The Al(OH)4- ions created inhibits the growth along the c-axis, effectively promoting the fast formation of a planar geometry selectively grown on top of the AlN layer. With the use of this promoting layer and a standard hydrothermal method, a selective area growth is observed with micrometric resolution. In addition, by using several advanced characterization techniques such as, X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDS/EDX), X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL), we observed a resulting doping with aluminum of the ZnO nanostructures, occupying substitutional and interstitial sites, that could lead to new promising applications. These high-quality n-doped ZnO nanosheets (NSs) exhibit strong ultraviolet emission in the 385-405 nm region without broad deep level emission. The piezoelectric nature of these nanostructures has been demonstrated by using piezoresponse atomic force microscope (PFM) and with the support of a piezoelectric test device. Therefore, this low-cost and fast selective-area synthesis of 2D n-doped ZnO NSs can be applicable to other aluminum based materials and paves the way to new promising applications, such as bioelectronic applications, energy generation or self-powered sensing
Note: Versió postprint del document publicat a: https://doi.org/10.1016/j.nanoen.2019.04.017
It is part of: Nano Energy, 2019, vol. 60, p. 817-826
URI: http://hdl.handle.net/2445/142071
Related resource: https://doi.org/10.1016/j.nanoen.2019.04.017
ISSN: 2211-2855
Appears in Collections:Articles publicats en revistes (Electrònica)

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