Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/15642
Title: Direct modulation of electroluminescence from silicon nanocrystals beyond radiative recombination rates
Author: Carreras, Josep
Albiol i Cobos, Jordi
Garrido Fernández, Blas
Bonafos, Caroline
Montserrat i Martí, Josep
Keywords: Luminescència
Conductivitat elèctrica
Semiconductors
Luminescence
Electric conductivity
Semiconductors
Issue Date: 3-Mar-2008
Abstract: We propose a light emitting transistor based on silicon nanocrystals provided with 200 Mbits/ s built-in modulation. Suppression of electroluminescence from silicon nanocrystals embedded into the gate oxide of a field effect transistor is achieved by fast Auger quenching. In this process, a modulating drain signal causes heating of carriers in the channel and facilitates the charge injection into the nanocrystals. This excess of charge enables fast nonradiative processes that are used to obtain 100% modulation depths at modulating voltages of 1 V.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.2889499
It is part of: Applied Physics Letters, 2008, vol. 92, núm. 9, p. 091103-1-91103-3
Related resource: http://dx.doi.org/10.1063/1.2889499
URI: http://hdl.handle.net/2445/15642
ISSN: 1077-3118
Appears in Collections:Articles publicats en revistes (Electrònica)
Publicacions de projectes de recerca finançats per la UE

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