Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/159771
Title: Hysteretic control of organic conductance due to remanent magnetic fringe fields
Author: Macià Bros, Ferran
Wang, Fujian
Harmon, Nicholas
Wohlgenannt, M.
Kent, A. D.
Flatté, Michael E.
Keywords: Ferromagnetisme
Semiconductors orgànics
Pel·lícules fines
Ferromagnetism
Organic semiconductors
Thin films
Issue Date: 2013
Publisher: American Institute of Physics
Abstract: Manipulation of the remanent (zero external magnetic field) magnetization state of a single ferromagnetic film is shown to control the room-temperature conductance of an organic semiconductor thin film deposited on top. For the organic semiconductor Alq3, the magnetic fringe fields from a multidomain remanent magnetization state of the film enhance the device conductance by several percent relative to its value for the magnetically saturated ferromagnetic film. The effect of fringe fields is insensitive to ferromagnetic film's thickness (which varies the fringe field magnitude proportionately) but sensitive to the magnetic domain's correlation length.
Note: Reproducció del document publicat a: https://doi.org/10.1063/1.4790141
It is part of: Applied Physics Letters, 2013, vol. 102, num. 042408
URI: http://hdl.handle.net/2445/159771
Related resource: https://doi.org/10.1063/1.4790141
ISSN: 0003-6951
Appears in Collections:Articles publicats en revistes (Física de la Matèria Condensada)

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