Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/18204
Title: Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge
Author: Bertrán Serra, Enric
Sharma, S. N.
Viera Mármol, Gregorio
Costa i Balanzat, Josep
St'ahel, P.
Roca i Cabarrocas, P. (Pere)
Keywords: Pel·lícules fines
Nanoparticules
Silici
Cristal·lització
Thin films
Nanoparticles
Silicon
Cristallization
Issue Date: 1998
Publisher: Materials Research Society
Abstract: Thin films of nanostructured silicon (ns-Si:H) were deposited by plasma-enhanced chemical vapor deposition in the presence of silicon nanoparticles at 100 C substrate temperature using silane and hydrogen gas mixture under continuous wave (cw) plasma conditions. The nanostructure of the films has been demonstrated by diverse ways: transmission electron microscopy, Raman spectroscopy and x-ray diffraction, which have shown the presence of ordered silicon clusters (1!=2 nm) embedded in an amorphous silicon matrix. Due to the presence of these ordered domains, the films crystallize faster than standard hydrogenated amorphous silicon samples, as evidenced by electrical measurements during the thermal annealing.
Note: Reproducció del document publicat a http://dx.doi.org/10.1557/JMR.1998.0347
It is part of: Journal of Materials Research, 1998, vol. 13, núm. 9, p. 2476-2479
URI: http://hdl.handle.net/2445/18204
ISSN: 0884-2914
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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