Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/22088
Title: Ni-Mn-Ga thin films produced by pulsed laser deposition
Author: Tello, P. G.
Castaño, F. J.
O'Handley, Robert C., 1942-
Allen, Samuel M.
Esteve, M.
Labarta, Amílcar
Batlle Gelabert, Xavier
Keywords: Pel·lícules fines
Cristal·lografia
Ciència dels materials
Làsers
Microelectrònica
Crystallography
Materials science
Lasers
Microelectronics
Issue Date: 2002
Publisher: American Institute of Physics
Abstract: Polycrystalline Ni-Mn-Ga thin films have been deposited by the pulsed laser deposition (PLD) technique, using slices of a Ni-Mn-Ga single crystal as targets and onto Si (100) substrates at temperatures ranging from 673 K up to 973 K. Off-stoichiometry thin films were deposited at a base pressure of 1×10-6-Torr or in a 5 mTorr Ar atmosphere. Samples deposited in vacuum and temperatures above 823 K are magnetic at room temperature and show the austenitic {220} reflection in their x-ray diffraction patterns. The temperature dependences of both electrical resistance and magnetic susceptibility suggest that these samples exhibit a structural martensitic transition at around 260 K. The magnetoresistance ratio at low temperature can be as high as 1.3%, suggesting the existence of a granular structure in the films
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1452222
It is part of: Journal of Applied Physics, 2002, vol. 91, núm. 10, p. 8234-8236
URI: http://hdl.handle.net/2445/22088
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Física de la Matèria Condensada)

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