Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/22096
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dc.contributor.authorKochelap, V. A. (Viacheslav Aleksandrovich)cat
dc.contributor.authorSokolov, V. N.cat
dc.contributor.authorBulashenko, Olegcat
dc.contributor.authorRubí Capaceti, José Miguelcat
dc.date.accessioned2012-02-16T08:49:40Z-
dc.date.available2012-02-16T08:49:40Z-
dc.date.issued2002-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2445/22096-
dc.description.abstractWe present a theory of the surface noise in a nonhomogeneous conductive channel adjacent to an insulating layer. The theory is based on the Langevin approach which accounts for the microscopic sources of fluctuations originated from trapping¿detrapping processes at the interface and intrachannel electron scattering. The general formulas for the fluctuations of the electron concentration, electric field as well as the current-noise spectral density have been derived. We show that due to the self-consistent electrostatic interaction, the current noise originating from different regions of the conductive channel appears to be spatially correlated on the length scale correspondent to the Debye screening length in the channel. The expression for the Hooge parameter for 1/f noise, modified by the presence of Coulomb interactions, has been derivedeng
dc.format.extent12 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoengeng
dc.publisherAmerican Institute of Physics-
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.1512698-
dc.relation.ispartofJournal of Applied Physics, 2002, vol. 92, núm. 9, p. 5347-5358-
dc.relation.urihttp://dx.doi.org/10.1063/1.1512698-
dc.rightsNoiseeng
dc.rights(c) American Institute of Physics, 2002-
dc.sourceArticles publicats en revistes (Física de la Matèria Condensada)-
dc.subject.classificationSorollcat
dc.subject.classificationSuperfícies (Tecnologia)cat
dc.subject.classificationCamps elèctricscat
dc.subject.classificationCircuits de transistorscat
dc.subject.classificationSemiconductorscat
dc.subject.classificationElectrònicacat
dc.subject.otherSurfaces (Technology)eng
dc.subject.otherElectric fieldseng
dc.subject.otherTransistor circuitseng
dc.subject.otherSemiconductorseng
dc.subject.otherElectronicseng
dc.titleTheory of surface noise under Coulomb correlations between carriers and surface stateseng
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec514168ca
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Física de la Matèria Condensada)

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