Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24160
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dc.contributor.authorGovernale, Michelecat
dc.contributor.authorMacucci, Massimocat
dc.contributor.authorIannacone, G.cat
dc.contributor.authorUngarelli, Carlocat
dc.contributor.authorMartorell Domenech, Juancat
dc.date.accessioned2012-04-19T09:00:11Z-
dc.date.available2012-04-19T09:00:11Z-
dc.date.issued1999-03-01-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2445/24160-
dc.description.abstractWe have investigated the behavior of bistable cells made up of four quantum dots and occupied by two electrons, in the presence of realistic confinement potentials produced by depletion gates on top of a GaAs/AlGaAs heterostructure. Such a cell represents the basic building block for logic architectures based on the concept of quantum cellular automata (QCA) and of ground state computation, which have been proposed as an alternative to traditional transistor-based logic circuits. We have focused on the robustness of the operation of such cells with respect to asymmetries derived from fabrication tolerances. We have developed a two-dimensional model for the calculation of the electron density in a driven cell in response to the polarization state of a driver cell. Our method is based on the one-shot configuration-interaction technique, adapted from molecular chemistry. From the results of our simulations, we conclude that an implementation of QCA logic based on simple ¿hole arrays¿ is not feasible, because of the extreme sensitivity to fabrication tolerances. As an alternative, we propose cells defined by multiple gates, where geometrical asymmetries can be compensated for by adjusting the bias voltages. Even though not immediately applicable to the implementation of logic gates and not suitable for large scale integration, the proposed cell layout should allow an experimental demonstration of a chain of QCA cells.eng
dc.format.extent10 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoengeng
dc.publisherAmerican Institute of Physics-
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.369061-
dc.relation.ispartofJournal of Applied Physics, 1999, vol. 85, núm. 5, p. 2962-2971-
dc.relation.urihttp://dx.doi.org/10.1063/1.369061-
dc.rights(c) American Institute of Physics, 1999-
dc.sourceArticles publicats en revistes (Física Quàntica i Astrofísica)-
dc.subject.classificationPropietats elèctriquescat
dc.subject.classificationReologiacat
dc.subject.otherElectric propertieseng
dc.subject.otherRheologyeng
dc.titleModeling and manufacturability assessment of bistable quantum-dot cellseng
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec181568-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Física Quàntica i Astrofísica)

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