Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24683
Title: Frequency resolved admittance spectroscopy measurements on In0.52Al0.48As/InxGa1¿xAs/In0.52Al0.48As single quantum well structures
Author: Marsal Garví, Lluís F. (Lluís Francesc)
López Villegas, José María
Bosch Estrada, José
Morante i Lleonart, Joan Ramon
Keywords: Espectroscòpia
Spectrum analysis
Issue Date: 15-Jul-1994
Publisher: American Institute of Physics
Abstract: In this work a new admittance spectroscopy technique is proposed to determine the conduction band offset in single quantum well structures (SQW). The proposed technique is based on the study of the capacitance derivative versus the frequency logarithm. This method is found to be less sensitive to parasitic effects, such as leakage current and series resistance, than the classical conductance analysis. Using this technique, we have determined the conduction band offset in In0.52Al0.48As/InxGa1¿xAs/In0.52Al0.48As SQW structures. Two different well compositions, x=0.53, which corresponds to the lattice¿matched case and x=0.60, which corresponds to a strained case, and two well widths (5 and 25 nm) have been considered. The average results are ¿Ec=0.49±0.04 eV for x=0.53 and ¿Ec =0.51±0.04 eV for x=0.6, which are in good agreement with previous reported data.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.357826
It is part of: Journal of Applied Physics, 1994, vol. 76, num. 2, p. 1077-1080
Related resource: http://dx.doi.org/10.1063/1.357826
URI: http://hdl.handle.net/2445/24683
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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