Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24745
Title: Structure of 60° dislocations at the GaAs/Si interface
Author: Vilà i Arbonès, Anna Maria
Cornet i Calveras, Albert
Morante i Lleonart, Joan Ramon
Ruterana, Pierre
Loubradou, Marc
Bonnet, Roland
Keywords: Microscòpia electrònica
Feixos moleculars
Electron microscopy
Molecular beams
Issue Date: 15-Jan-1996
Publisher: American Institute of Physics
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.360812
It is part of: Journal of Applied Physics, 1996, vol. 79, núm. 2, p. 676-681
Related resource: http://dx.doi.org/10.1063/1.360812
URI: http://hdl.handle.net/2445/24745
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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