Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24746
Title: Effect of stress and composition on the Raman spectra of etch-stop SiGeB layers
Author: Pérez Rodríguez, Alejandro
Romano Rodríguez, Alberto
Cabezas, R.
Morante i Lleonart, Joan Ramon
Jawhari, Tariq
Hunt, Charles E.
Keywords: Espectroscòpia Raman
Raman spectroscopy
Raman effect
Efecte Raman
Issue Date: 15-Nov-1996
Publisher: American Institute of Physics
Abstract: Si1−(x+y)GexBy strained layers on Si (x≤3.4%, y≤0.4%) have been analyzed by Raman spectroscopy. Stress in the layers has not been observed to affect the Fano interaction parameters of the first‐order Si–Si Raman line. These parameters have been determined in the range of B concentrations from 5×1019 to 2×1020 cm−3 and Ge fractions from 1% to 3.4%. The observed shift in the spectra has been found to depend linearly on both the germanium and boron contents. These data have been correlated with the stress measured in the layers by mechanical wafer bow measurements. The dependence of the Raman shift on the germanium content and strain agrees with that previously reported for strained SiGe layers. According to these data, Raman spectroscopy appears as an interesting tool for the nondestructive assessment of stress and composition of these layers.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.363627
It is part of: Journal of Applied Physics, 1996, vol. 80, núm. 10, p. 5736-5741
Related resource: http://dx.doi.org/10.1063/1.363627
URI: http://hdl.handle.net/2445/24746
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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