Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24784
Title: Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy
Author: Roura Grabulosa, Pere
López de Miguel, Manuel
Cornet i Calveras, Albert
Morante i Lleonart, Joan Ramon
Keywords: Microscòpia electrònica
Pel·lícules fines
Electron microscopy
Thin films
Issue Date: 15-May-1997
Publisher: American Institute of Physics
Abstract: A series of InxAl12xAs samples (0.51,x,0.55) coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x50.532, at 14 K we have obtained Eg05154966 meV. © 1997 American Institute of Physics.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.365253
It is part of: Journal of Applied Physics, 1997, vol. 81, num. 10, p. 6916-6920
Related resource: http://dx.doi.org/10.1063/1.365253
URI: http://hdl.handle.net/2445/24784
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

Files in This Item:
File Description SizeFormat 
115846.pdf103.92 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.