Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24785
Title: Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structures
Author: Macía Santamaría, Javier
Martín, E.
Pérez Rodríguez, Alejandro
Jiménez, J.
Morante i Lleonart, Joan Ramon
Aspar, Bernard
Margail, Jacques
Keywords: Cristal·lografia
Superfícies (Física)
Crystallography
Surfaces (Physics)
Issue Date: 15-Oct-1997
Publisher: American Institute of Physics
Abstract: A microstructural analysis of silicon-on-insulator samples obtained by high dose oxygen ion implantation was performed by Raman scattering. The samples analyzed were obtained under different conditions thus leading to different concentrations of defects in the top Si layer. The samples were implanted with the surface covered with SiO2 capping layers of different thicknesses. The spectra measured from the as-implanted samples were fitted to a correlation length model taking into account the possible presence of stress effects in the spectra. This allowed quantification of both disorder effects, which are determined by structural defects, and residual stress in the top Si layer before annealing. These data were correlated to the density of dislocations remaining in the layer after annealing. The analysis performed corroborates the existence of two mechanisms that generate defects in the top Si layer that are related to surface conditions during implantation and the proximity of the top Si/buried oxide layer interface to the surface before annealing.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.365735
It is part of: Journal of Applied Physics, 1997, vol. 82, núm. 8, p. 3730-3735
Related resource: http://dx.doi.org/10.1063/1.365735
URI: http://hdl.handle.net/2445/24785
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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