Please use this identifier to cite or link to this item:
Title: Atomic structure of the nanocrystalline Si particles appearing in nanostructured Si thin films produced in low-temperature radiofrequency plasmas
Author: Viera Mármol, Gregorio
Mikikian, M.
Bertrán Serra, Enric
Roca i Cabarrocas, P. (Pere)
Boufendi, L.
Keywords: Estructura atòmica
Atomic structure
Thin films
Plasma (Ionized gases)
Pel·lícules fines
Plasma (Gasos ionitzats)
Issue Date: 15-Oct-2002
Publisher: American Institute of Physics
Abstract: Nanostructured Si thin films, also referred as polymorphous, were grown by plasma-enhanced chemical vapor deposition. The term "polymorphous" is used to define silicon material that consists of a two-phase mixture of amorphous and ordered Si. The plasma conditions were set to obtain Si thin films from the simultaneous deposition of radical and ordered nanoparticles. Here, a careful analysis by electron transmission microscopy and electron diffraction is reported with the aim to clarify the specific atomic structure of the nanocrystalline particles embedded in the films. Whatever the plasma conditions, the electron diffraction images always revealed the existence of a well-defined crystalline structure different from the diamondlike structure of Si. The formation of nanocrystallinelike films at low temperature is discussed. A Si face-cubic-centered structure is demonstrated here in nanocrystalline particles produced in low-pressure silane plasma at room temperature.
Note: Reproducció del document publicat a:
It is part of: Journal of Applied Physics, 2002, vol. 92, núm. 8, p. 4684-4694
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Física Aplicada)

Files in This Item:
File Description SizeFormat 
184391.pdf1.63 MBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.