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http://hdl.handle.net/2445/24810
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DC Field | Value | Language |
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dc.contributor.author | Herranz Casabona, Gervasi | cat |
dc.contributor.author | Sánchez Barrera, Florencio | cat |
dc.contributor.author | Martínez Perea, Benjamin | cat |
dc.contributor.author | Fontcuberta i Griñó, Josep | cat |
dc.contributor.author | García-Cuenca Varona, María Victoria | cat |
dc.contributor.author | Ferrater Martorell, Cèsar | cat |
dc.contributor.author | Varela Fernández, Manuel, 1956- | cat |
dc.date.accessioned | 2012-05-03T09:14:36Z | - |
dc.date.available | 2012-05-03T09:14:36Z | - |
dc.date.issued | 2004-06-01 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/2445/24810 | - |
dc.description.abstract | We report a systematic study of the low-temperature electrical conductivity in a series of SrRuO3 epitaxial thin films. At relatively high temperature the films display the conventional metallic behavior. However, a well-defined resistivity minimum appears at low temperature. This temperature dependence can be well described in a weak localization scenario: the resistivity minimum arising from the competition of electronic self-interference effects and the normal metallic character. By appropriate selection of the film growth conditions, we have been able to modify the mean-free path of itinerant carriers and thus to tune the relative strength of the quantum effects. We show that data can be quantitatively described by available theoretical models. | eng |
dc.format.extent | 3 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | eng |
dc.publisher | American Institute of Physics | - |
dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1682785 | - |
dc.relation.ispartof | Journal of Applied Physics, 2004, vol. 95, p. 7213-7215 | - |
dc.relation.uri | http://dx.doi.org/10.1063/1.1682785 | - |
dc.rights | (c) American Institute of Physics, 2004 | - |
dc.source | Articles publicats en revistes (Física Aplicada) | - |
dc.subject.classification | Ferromagnetisme | cat |
dc.subject.classification | Conductivitat elèctrica | cat |
dc.subject.classification | Pel·lícules fines | cat |
dc.subject.other | Ferromagnetism | eng |
dc.subject.other | Electric conductivity | eng |
dc.subject.other | Thin films | eng |
dc.title | Self-interference of charge carriers in ferromagnetic SrRuO3 | eng |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 518936 | - |
dc.date.updated | 2012-04-25T10:42:07Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
Files in This Item:
File | Description | Size | Format | |
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518936.pdf | 126.12 kB | Adobe PDF | View/Open |
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