Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24822
Title: Electron capture and emission by the Ti acceptor level in GaP
Author: Roura Grabulosa, Pere
Morante i Lleonart, Joan Ramon
Guillot, G.
Bremond, G.
Ulrici, W.
Keywords: Estructura electrònica
Propietats òptiques
Electronic structure
Optical properties
Issue Date: 15-Aug-1995
Publisher: American Institute of Physics
Abstract: Previously reported results on deep level optical spectroscopy, optical absorption, deep level transient spectroscopy, photoluminescence excitation, and time resolved photoluminescence are reviewed and discussed in order to know which are the mechanisms involved in electron capture and emission of the Ti acceptor level in GaP. First, the analysis indicates that the 3T1(F) crystal¿field excited state is not in resonance with the conduction band states. Second, it is shown that both the 3T2 and 3T1(F) excited states do not play any significant role in the process of electron emission and capture.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.360097
It is part of: Journal of Applied Physics, 1995, vol. 78, núm. 4, p. 2441-2446
Related resource: http://dx.doi.org/10.1063/1.360097
URI: http://hdl.handle.net/2445/24822
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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