Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24825
Title: Shot-noise suppression in Schottky barrier diodes
Author: Gomila Lluch, Gabriel
Reggiani, L. (Lino), 1941-
Rubí Capaceti, José Miguel
Keywords: Microelectrònica
Matèria condensada
Microelectronics
Condensed matter
Issue Date: 1-Sep-2000
Publisher: American Institute of Physics
Abstract: We give a theoretical interpretation of the noise properties of Schottky barrier diodes based on the role played by the long range Coulomb interaction. We show that at low bias Schottky diodes display shot noise because the presence of the depletion layer makes the effects of the Coulomb interaction negligible on the current fluctuations. When the device passes from barrier to flat band conditions, the Coulomb interaction becomes active, thus introducing correlation between different current fluctuations. Therefore, the crossover between shot and thermal noise represents the suppression due to long range Coulomb interaction of the otherwise full shot noise. Similar ideas can be used to interpret the noise properties of other semiconductor devices.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1288219
It is part of: Journal of Applied Physics, 2000, vol. 88, p. 3079-3081
Related resource: http://dx.doi.org/10.1063/1.1288219
URI: http://hdl.handle.net/2445/24825
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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