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http://hdl.handle.net/2445/24883
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DC Field | Value | Language |
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dc.contributor.author | Porti i Pujal, Marc | cat |
dc.contributor.author | Avidano, M. | cat |
dc.contributor.author | Nafría i Maqueda, Montserrat | cat |
dc.contributor.author | Aymerich Humet, Xavier | cat |
dc.contributor.author | Carreras, Josep | cat |
dc.contributor.author | Garrido Fernández, Blas | cat |
dc.date.accessioned | 2012-05-03T11:42:14Z | - |
dc.date.available | 2012-05-03T11:42:14Z | - |
dc.date.issued | 2005-09-02 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/2445/24883 | - |
dc.description.abstract | In this work, we demonstrate that conductive atomic force microscopy (C-AFM) is a very powerful tool to investigate, at the nanoscale, metal-oxide-semiconductor structures with silicon nanocrystals (Si-nc) embedded in the gate oxide as memory devices. The high lateral resolution of this technique allows us to study extremely small areas ( ~ 300nm2) and, therefore, the electrical properties of a reduced number of Si-nc. C-AFM experiments have demonstrated that Si-nc enhance the gate oxide electrical conduction due to trap-assisted tunneling. On the other hand, Si-nc can act as trapping centers. The amount of charge stored in Si-nc has been estimated through the change induced in the barrier height measured from the I-V characteristics. The results show that only ~ 20% of the Si-nc are charged, demonstrating that the electrical behavior at the nanoscale is consistent with the macroscopic characterization. | eng |
dc.format.extent | 3 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | eng |
dc.publisher | American Institute of Physics | - |
dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.2010626 | - |
dc.relation.ispartof | Journal of Applied Physics, 2005, vol. 98, p. 056101-056103 | - |
dc.relation.uri | http://dx.doi.org/10.1063/1.2010626 | - |
dc.rights | (c) American Institute of Physics, 2005 | - |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Propietats magnètiques | cat |
dc.subject.classification | Microelectrònica | cat |
dc.subject.classification | Estructura electrònica | cat |
dc.subject.classification | Superfícies (Física) | cat |
dc.subject.classification | Interfícies (Ciències físiques) | cat |
dc.subject.classification | Pel·lícules fines | cat |
dc.subject.other | Magnetic properties | eng |
dc.subject.other | Microelectronics | eng |
dc.subject.other | Electronic structure | eng |
dc.subject.other | Surfaces (Physics) | eng |
dc.subject.other | Interfaces (Physical sciences) | eng |
dc.subject.other | Thin films | eng |
dc.title | Conduction mechanisms and charge storage in Si-nanocrystals metal-oxide-semiconductor memory devices studied with conducting atomic force microscopy | eng |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 539649 | - |
dc.date.updated | 2012-04-20T11:36:37Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
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539649.pdf | 142.26 kB | Adobe PDF | View/Open |
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