Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24885
Full metadata record
DC FieldValueLanguage
dc.contributor.authorPastor Pastor, Davidcat
dc.contributor.authorCuscó i Cornet, Ramoncat
dc.contributor.authorArtús i Surroca, Lluíscat
dc.contributor.authorIborra, Enriquecat
dc.contributor.authorJiménez, J.cat
dc.contributor.authorPeiró Martínez, Franciscacat
dc.contributor.authorGonzález Díaz, Germáncat
dc.contributor.authorCalleja Pardo, Enriquecat
dc.date.accessioned2012-05-03T11:52:55Z-
dc.date.available2012-05-03T11:52:55Z-
dc.date.issued2006-08-21-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2445/24885-
dc.description.abstractWe have studied the effects of rapid thermal annealing at 1300¿°C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology scattered over the surface. The annealed GaN/Si layers were characterized by a range of experimental techniques: scanning electron microscopy, optical confocal imaging, energy dispersive x-ray microanalysis, Raman scattering, and cathodoluminescence. A substantial Si migration to the GaN epilayer was observed in the crater regions, where decomposition of GaN and formation of Si3N4 crystallites as well as metallic Ga droplets and Si nanocrystals have occurred. The average diameter of the Si nanocrystals was estimated from Raman scattering to be around 3¿nm. Such annealing effects, which are not observed in GaN grown on sapphire, are a significant issue for applications of GaN grown on Si(111) substrates when subsequent high-temperature processing is required.eng
dc.format.extent5 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoengeng
dc.publisherAmerican Institute of Physics-
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.2259817-
dc.relation.ispartofJournal of Applied Physics, 2006, vol. 100, núm. 4, p. 43508-1-43508-5-
dc.relation.urihttp://dx.doi.org/10.1063/1.2259817-
dc.rights(c) American Institute of Physics, 2006-
dc.subject.classificationCiència dels materialscat
dc.subject.classificationCristal·lografiacat
dc.subject.otherMaterials scienceeng
dc.subject.otherCrystallographyeng
dc.titleThe effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphireeng
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec542837-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Electrònica)

Files in This Item:
File Description SizeFormat 
542837.pdf262.74 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.