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DC Field | Value | Language |
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dc.contributor.author | Izquierdo Roca, Victor | cat |
dc.contributor.author | Pérez Rodríguez, Alejandro | cat |
dc.contributor.author | Romano Rodríguez, Albert | cat |
dc.contributor.author | Morante i Lleonart, Joan Ramon | cat |
dc.contributor.author | Álvarez García, Jacobo | cat |
dc.contributor.author | Calvo Barrio, Lorenzo | cat |
dc.contributor.author | Bermudez, V. | cat |
dc.contributor.author | Grand, P. P. | cat |
dc.contributor.author | Ramdani, O. | cat |
dc.contributor.author | Parissi, L. | cat |
dc.contributor.author | Kerrec, O. | cat |
dc.date.accessioned | 2012-05-03T12:12:51Z | - |
dc.date.available | 2012-05-03T12:12:51Z | - |
dc.date.issued | 2007-05-22 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/2445/24888 | - |
dc.description.abstract | This article reports a detailed Raman scattering and microstructural characterization of S-rich CuIn(S,Se)2 absorbers produced by electrodeposition of nanocrystalline CuInSe2 precursors and subsequent reactive annealing under sulfurizing conditions. Surface and in-depth resolved Raman microprobe measurements have been correlated with the analysis of the layers by optical and scanning electron microscopy, x-ray diffraction, and in-depth Auger electron spectroscopy. This has allowed corroboration of the high crystalline quality of the sulfurized layers. The sulfurizing conditions used also lead to the formation of a relatively thick MoS2 intermediate layer between the absorber and the Mo back contact. The analysis of the absorbers has also allowed identification of the presence of In-rich secondary phases, which are likely related to the coexistence in the electrodeposited precursors of ordered vacancy compound domains with the main chalcopyrite phase, in spite of the Cu-rich conditions used in the growth. This points out the higher complexity of the electrodeposition and sulfurization processes in relation to those based in vacuum deposition techniques. | eng |
dc.format.extent | 8 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | eng |
dc.publisher | American Institute of Physics | - |
dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.2734103 | - |
dc.relation.ispartof | Journal of Applied Physics, 2007, vol. 101, núm. 10, p. 103517-1-103517-8 | - |
dc.relation.uri | http://dx.doi.org/10.1063/1.2734103 | - |
dc.rights | (c) American Institute of Physics, 2007 | - |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Ciència dels materials | cat |
dc.subject.classification | Propietats òptiques | cat |
dc.subject.other | Materials science | eng |
dc.subject.other | Optical properties | eng |
dc.title | Raman microprobe characterization of electrodeposited S-rich CuIn(S,Se)2 for photovoltaic applications: Microstructural analysis | - |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 553860 | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
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553860.pdf | 618.6 kB | Adobe PDF | View/Open |
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