Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24892
Title: Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping
Author: Furtmayr, Florian
Vielemeyer, Martin
Stutzmann, Martin
Arbiol i Cobos, Jordi
Estradé Albiol, Sònia
Peiró Martínez, Francisca
Morante i Lleonart, Joan Ramon
Eickhoff, Martin
Keywords: Cristal·lografia
Ciència dels materials
Crystallography
Materials scienc
Issue Date: 8-Aug-2008
Publisher: American Institute of Physics
Abstract: The self-assembled growth of GaN nanorods on Si (111) substrates by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions is investigated. An amorphous silicon nitride layer is formed in the initial stage of growth that prevents the formation of a GaN wetting layer. The nucleation time was found to be strongly influenced by the substrate temperature and was more than 30 min for the applied growth conditions. The observed tapering and reduced length of silicon-doped nanorods is explained by enhanced nucleation on nonpolar facets and proves Ga-adatom diffusion on nanorod sidewalls as one contribution to the axial growth. The presence of Mg leads to an increased radial growth rate with a simultaneous decrease of the nanorod length and reduces the nucleation time for high Mg concentrations.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.2953087
It is part of: Journal of Applied Physics, 2008, vol. 104, num. 3, p. 034309-1-034309-7
Related resource: http://dx.doi.org/10.1063/1.2953087
URI: http://hdl.handle.net/2445/24892
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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