Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/25043
Title: X-ray photoelectron spectroscopy analysis of ion¿beam¿induced oxidation of GaAs and AlGaAs
Author: Alay, Josep Lluís
Vandervorst, Wilfried
Keywords: Semiconductors
Microelectrònica
Química analítica
Espectroscòpia d'electrons
Semiconductors
Microelectronics
Analytical chemistry
Electron spectroscopy
Issue Date: 1992
Publisher: American Institute of Physics
Abstract: The oxidation of GaAs and AlGaAs targets subjected to O2+ bombardment has been analyzed, using in situ x¿ray photoelectron spectroscopy, as a function of time until steady state is reached. The oxides formed by the O2+ bombardment have been characterized in terms of composition and binding energy. A strong energy and angular dependence for the oxidation of As relative to Ga is found. Low energies as well as near normal angles of incidence favor the oxidation of As. The difference between Ga and As can be explained in terms of the formation enthalpy for the oxide and the excess supply of oxygen. In an AlGaAs target the Al is very quickly completely oxidized irrespective of the experimental conditions. The steady state composition of the altered layers show in all cases a preferential removal of As.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1116/1.577731
It is part of: Journal of Vacuum Science Technology A-Vacuum Surfaces and Films, 1992, vol. 10, p. 2926-2930
Related resource: http://dx.doi.org/10.1116/1.577731
URI: http://hdl.handle.net/2445/25043
ISSN: 0734-2101
Appears in Collections:Articles publicats en revistes (Electrònica)

Files in This Item:
File Description SizeFormat 
109542.pdf426.21 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.