Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/25053
Title: Ion assisted deposition of thin films by substrate tuned radio frequency magnetron sputtering
Author: Lousa Rodríguez, Arturo
Gimeno, S.
Keywords: Pel·lícules fines
Radiofreqüència
Ions
Nitrur de bor
Thin films
Radio frequency
Ions
Boron nitride
Issue Date: Jan-1997
Publisher: American Institute of Physics
Abstract: The substrate tuning technique was applied to a radio frequency magnetron sputtering system to obtain a variable substrate bias without an additional source. The dependence of the substrate bias on the value of the external impedance was studied for different values of chamber pressure, gas composition and rf input power. A qualitative explanation of the results is given, based on a simple model, and the role of the stray capacitance is clearly disclosed. Langmuir probe measurements show that this system allows independent control of the ion flux and the ion energy bombarding the growing film. For an argon flow rate of 2.8 sccm and a radio frequency power of 300 W (intermediate values of the range studied) the ion flux incident on the substrate was 1.3 X 1020-m-2-s-1. The maximum ion energy available in these conditions can be varied in the range 30-150 eV. As a practical application of the technique, BN thin films were deposited under different ion bombardment conditions. An ion energy threshold of about 80 eV was found, below which only the hexagonal phase was present in the films, while for higher energies both hexagonal and cubic phase were present. A cubic content of about 60% was found for an ion energy of 120 V.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1116/1.580477
It is part of: Journal of Vacuum Science Technology A-Vacuum Surfaces and Films, 1997, vol. 15, num. 1, p. 62-66
Related resource: http://dx.doi.org/10.1116/1.580477
URI: http://hdl.handle.net/2445/25053
ISSN: 0734-2101
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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