Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/25085
Title: Influence of the (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowires
Author: Arbiol i Cobos, Jordi
Fontcuberta i Morral, A.
Estradé Albiol, Sònia
Peiró Martínez, Francisca
Kalache, Billel
Roca i Cabarrocas, P. (Pere)
Morante i Lleonart, Joan Ramon
Keywords: Ciència dels materials
Nanoestructures
Materials science
Nanostructures
Issue Date: 2008
Publisher: American Institute of Physics
Abstract: The occurrence of heterostructures of cubic silicon/hexagonal silicon as disks defined along the nanowire (111) growth direction is reviewed in detail for Si nanowires obtained using Cu as catalyst. Detailed measurements on the structural properties of both semiconductor phases and their interface are presented. We observe that during growth, lamellar twinning on the cubic phase along the (111) direction is generated. Consecutive presence of twins along the (111) growth direction was found to be correlated with the origin of the local formation of the hexagonal Si segments along the nanowires, which define quantum wells of hexagonal Si diamond. Finally, we evaluate and comment on the consequences of the twins and wurtzite in the final electronic properties of the wires with the help of the predicted energy band diagram.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.2976338
It is part of: Journal of Applied Physics, 2008, vol. 104, núm. 6, p. 064312-1-064312-7
Related resource: http://dx.doi.org/10.1063/1.2976338
URI: http://hdl.handle.net/2445/25085
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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