Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/28682
Title: A gated single-photon avalanche diode array fabricated in a conventional CMOS process for triggered systems
Author: Vilella Figueras, Eva
Diéguez Barrientos, Àngel
Keywords: Metall-òxid-semiconductors complementaris
Electrònica
Díodes
Detectors
Complementary metal oxide semiconductors
Electronics
Diodes
Detectors
Issue Date: 2012
Publisher: Elsevier B.V.
Abstract: A bidimensional array based on single-photon avalanche diodes for triggered imaging systems is presented. The diodes are operated in the gated mode of acquisition to reduce the probability to detect noise counts interfering with photon arrival events. In addition, low reverse bias overvoltages are used to lessen the dark count rate. Experimental results demonstrate that the prototype fabricated with a standard HV-CMOS process gets rid of afterpulses and offers a reduced dark count probability by applying the proposed modes of operation. The detector exhibits a dynamic range of 15 bits with short gated"on" periods of 10ns and a reverse bias overvoltage of 1.0V.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.sna.2012.01.019
It is part of: Sensors and Actuators A-Physical, 2012, vol. 186, p. 1-6
Related resource: http://dx.doi.org/10.1016/j.sna.2012.01.019
URI: http://hdl.handle.net/2445/28682
ISSN: 0924-4247
Appears in Collections:Articles publicats en revistes (Electrònica)

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