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http://hdl.handle.net/2445/28810
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DC Field | Value | Language |
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dc.contributor.author | Ibáñez i Insa, Jordi | - |
dc.contributor.author | Oliva Vidal, Robert | - |
dc.contributor.author | Mare, M. de la | - |
dc.contributor.author | Schmidbauer, M. | - |
dc.contributor.author | Hernández Márquez, Sergi | - |
dc.contributor.author | Pellegrino, Paolo | - |
dc.contributor.author | Scurr, D. J. | - |
dc.contributor.author | Cuscó i Cornet, Ramon | - |
dc.contributor.author | Artús i Surroca, Lluís | - |
dc.contributor.author | Shafi, M. | - |
dc.contributor.author | Mari, R. H. | - |
dc.contributor.author | Henini, M. | - |
dc.contributor.author | Zhuang, Q. | - |
dc.contributor.author | Godenir, A. | - |
dc.contributor.author | Krier, A. | - |
dc.date.accessioned | 2012-07-18T06:57:05Z | - |
dc.date.available | 2012-07-18T06:57:05Z | - |
dc.date.issued | 2010 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/2445/28810 | - |
dc.description.abstract | We perform a structural and optical characterization of InAs1¿xNx epilayers grown by molecular beam epitaxy on InAs substrates x 2.2% . High-resolution x-ray diffraction HRXRD is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy ToF-SIMS measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard"s law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing BAC model. We find that the room-temperature coupling parameter for InAsN within the BAC model is CNM=2.0 0.1 eV. | - |
dc.format.extent | 8 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | American Institute of Physics | - |
dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.3509149 | - |
dc.relation.ispartof | Journal of Applied Physics, 2010, vol. 108, num. 1, p. 103504-1-103504-8 | - |
dc.relation.uri | http://dx.doi.org/10.1063/1.3509149 | - |
dc.rights | (c) American Institute of Physics , 2010 | - |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Propietats òptiques | - |
dc.subject.classification | Pel·lícules fines | - |
dc.subject.classification | Difracció de raigs X | - |
dc.subject.classification | Semiconductors | - |
dc.subject.classification | Cristal·lografia | - |
dc.subject.other | Optical properties | - |
dc.subject.other | Thin films | - |
dc.subject.other | X-rays diffraction | - |
dc.subject.other | Semiconductors | - |
dc.subject.other | Crystallography | - |
dc.title | Structural and optical properties of dilute InAsN grown by molecular beam epitaxy | eng |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 596070 | - |
dc.date.updated | 2012-07-18T06:57:06Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
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596070.pdf | 369.3 kB | Adobe PDF | View/Open |
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