Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/29422
Title: Gated Geiger mode avalanche photodiode pixels with integrated readout electronics for low noise photon detection
Author: Vilella Figueras, Eva
Comerma Montells, Albert
Alonso Casanovas, Oscar
Gascón Fora, David
Diéguez Barrientos, Àngel
Keywords: Metall-òxid-semiconductors complementaris
Soroll electrònic
Complementary metal oxide semiconductors
Electronic noise
Issue Date: 2011
Publisher: Elsevier B.V.
Abstract: Avalanche photodiodes operated in the Geiger mode offer a high intrinsic gain as well as an excellent timing accuracy. These qualities make the sensor specially suitable for those applications where detectors with high sensitivity and low timing uncertainty are required. Moreover, they are compatible with standard CMOS technologies, allowing sensor and front-end electronics integration within the pixel cell. However, the sensor suffers from high levels of intrinsic noise, which may lead to erroneous results and limit the range of detectable signals. They also increase the amount of data that has to be stored. In this work, we present a pixel based on a Geiger-mode avalanche photodiode operated in the gated mode to reduce the probability to detect noise counts interfering with photon arrival events. The readout circuit is based on a two grounds scheme to enable low reverse bias overvoltages and consequently lessen the dark count rate. Experimental characterization of the fabricated pixel with the HV-AMS 0.35µm standard technology is also presented in this article.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.nima.2011.12.026
It is part of: Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment, vol 695, p. 218-221, 2012
Related resource: http://dx.doi.org/10.1016/j.nima.2011.12.026
URI: http://hdl.handle.net/2445/29422
ISSN: 0168-9002
Appears in Collections:Articles publicats en revistes (Electrònica)

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