Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32209
Title: Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions.
Author: Jambois, Olivier
Berencén Ramírez, Yonder Antonio
Hijazi, K.
Wojdak, M.
Kenyon, Anthony J.
Gourbilleau, F.
Rizk, Richard
Garrido Fernández, Blas
Keywords: Metall-òxid-semiconductors
Luminescència
Propietats òptiques
Optoelectrònica
Metal oxide semiconductors
Luminescence
Optical properties
Optoelectronics
Issue Date: 2009
Publisher: American Institute of Physics
Abstract: We have studied the current transport and electroluminescence properties of metal oxide semiconductor MOS devices in which the oxide layer, which is codoped with silicon nanoclusters and erbium ions, is made by magnetron sputtering. Electrical measurements have allowed us to identify a Poole-Frenkel conduction mechanism. We observe an important contribution of the Si nanoclusters to the conduction in silicon oxide films, and no evidence of Fowler-Nordheim tunneling. The results suggest that the electroluminescence of the erbium ions in these layers is generated by energy transfer from the Si nanoparticles. Finally, we report an electroluminescence power efficiency above 10−3%. © 2009 American Institute of Physics. doi:10.1063/1.3213386
It is part of: Journal of Applied Physics, 2009, vol. 106, p. 063526-1-063526-6
URI: http://hdl.handle.net/2445/32209
ISSN: 0021-8979
Appears in Collections:Publicacions de projectes de recerca finançats per la UE
Articles publicats en revistes (Electrònica)

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