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http://hdl.handle.net/2445/32210
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DC Field | Value | Language |
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dc.contributor.author | Berencén Ramírez, Yonder Antonio | - |
dc.contributor.author | Carreras, Josep | - |
dc.contributor.author | Jambois, Olivier | - |
dc.contributor.author | Ramírez Ramírez, Joan Manel | - |
dc.contributor.author | Rodríguez, J. A. | - |
dc.contributor.author | Domínguez, Carlos (Domínguez Horna) | - |
dc.contributor.author | Hunt, Charles E. | - |
dc.contributor.author | Garrido Fernández, Blas | - |
dc.date.accessioned | 2012-10-05T09:37:58Z | - |
dc.date.available | 2012-10-05T09:37:58Z | - |
dc.date.issued | 2011 | - |
dc.identifier.issn | 1094-4087 | - |
dc.identifier.uri | http://hdl.handle.net/2445/32210 | - |
dc.description.abstract | The potential for application of silicon nitride-based light sources to general lighting is reported. The mechanism of current injection and transport in silicon nitride layers and silicon oxide tunnel layers is determined by electro-optical characterization of both bi- and tri-layers. It is shown that red luminescence is due to bipolar injection by direct tunneling, whereas Poole-Frenkel ionization is responsible for blue-green emission. The emission appears warm white to the eye, and the technology has potential for large-area lighting devices. A photometric study, including color rendering, color quality and luminous efficacy of radiation, measured under various AC excitation conditions, is given for a spectrum deemed promising for lighting. A correlated color temperature of 4800K was obtained using a 35% duty cycle of the AC excitation signal. Under these conditions, values for general color rendering index of 93 and luminous efficacy of radiation of 112 lm/W are demonstrated. This proof of concept demonstrates that mature silicon technology, which is extendable to lowcost, large-area lamps, can be used for general lighting purposes. Once the external quantum efficiency is improved to exceed 10%, this technique could be competitive with other energy-efficient solid-state lighting options. ©2011 Optical Society of America OCIS codes: (230.2090) Electro-optical devices; (150.2950) Illumination. | - |
dc.format.extent | 11 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Optical Society of America | - |
dc.relation.isformatof | Reproducció del document publicat a: http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-103-A234 | - |
dc.relation.ispartof | Optics Express, 2011, vol. 19, num. S3, p. A234-A244 | - |
dc.rights | (c) Optical Society of America, 2011 | - |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Luminescència | - |
dc.subject.classification | Física de l'estat sòlid | - |
dc.subject.classification | Luminotècnia | - |
dc.subject.classification | Dispositius electroòptics | - |
dc.subject.other | Luminescence | - |
dc.subject.other | Solid state physics | - |
dc.subject.other | Lighting | - |
dc.subject.other | Electrooptical devices | - |
dc.title | Metal-Nitride-oxide-semiconductor light-emitting devices for general lighting. | eng |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 595941 | - |
dc.date.updated | 2012-10-05T09:37:59Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
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595941.pdf | 3.66 MB | Adobe PDF | View/Open |
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