Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32211
Title: Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures
Author: Berencén Ramírez, Yonder Antonio
Jambois, Olivier
Ramírez Ramírez, Joan Manel
Rebled, J. M. (José Manuel)
Estradé Albiol, Sònia
Peiró Martínez, Francisca
Domínguez, Carlos (Domínguez Horna)
Rodríguez, J. A.
Garrido Fernández, Blas
Keywords: Microelectrònica
Metall-òxid-semiconductors
Luminescència
Optoelectrònica
Microelectronics
Metal oxide semiconductors
Luminescence
Optoelectronics
Issue Date: 2011
Publisher: Optical Society of America
Abstract: Blue green to near-IR switching electroluminescence (EL) has been achieved in a metal-oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si-rich silicon oxide/nitride bilayer structure. To form Si nanostructures, the layers were implanted with Si ions at high energy, resulting in a Si excess of 19%, and subsequently annealed at 1000 °C. Transmission electron microscopy and EL studies allowed ascribing the blue-green emission to the Si nitride related defects and the near-IR band with the emission of the Si-nanoclusters embedded into the SiO2 layer. Charge transport analysis is reported and allows for identifying the origin of this twowavelength switching effect.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1364/OL.36.002617
It is part of: Optics Letters, 2011, vol. 36, num. 14, p. 2617-2619
Related resource: http://dx.doi.org/10.1364/OL.36.002617
URI: http://hdl.handle.net/2445/32211
ISSN: 0146-9592
Appears in Collections:Articles publicats en revistes (Electrònica)

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