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Title: | Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures |
Author: | Berencén Ramírez, Yonder Antonio Jambois, Olivier Ramírez Ramírez, Joan Manel Rebled, J. M. (José Manuel) Estradé Albiol, Sònia Peiró Martínez, Francisca Domínguez, Carlos (Domínguez Horna) Rodríguez, J. A. Garrido Fernández, Blas |
Keywords: | Microelectrònica Metall-òxid-semiconductors Luminescència Optoelectrònica Microelectronics Metal oxide semiconductors Luminescence Optoelectronics |
Issue Date: | 2011 |
Publisher: | Optical Society of America |
Abstract: | Blue green to near-IR switching electroluminescence (EL) has been achieved in a metal-oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si-rich silicon oxide/nitride bilayer structure. To form Si nanostructures, the layers were implanted with Si ions at high energy, resulting in a Si excess of 19%, and subsequently annealed at 1000 °C. Transmission electron microscopy and EL studies allowed ascribing the blue-green emission to the Si nitride related defects and the near-IR band with the emission of the Si-nanoclusters embedded into the SiO2 layer. Charge transport analysis is reported and allows for identifying the origin of this twowavelength switching effect. |
Note: | Reproducció del document publicat a: http://dx.doi.org/10.1364/OL.36.002617 |
It is part of: | Optics Letters, 2011, vol. 36, num. 14, p. 2617-2619 |
URI: | http://hdl.handle.net/2445/32211 |
Related resource: | http://dx.doi.org/10.1364/OL.36.002617 |
ISSN: | 0146-9592 |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
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