Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32216
Title: Analysis of the near-intrinsic and extrinsic photocapacitance due to the EL2 level in boron implanted GaAs
Author: Morante i Lleonart, Joan Ramon
Samitier i Martí, Josep
Pérez Rodríguez, Alejandro
Altelarrea Soria, Hermenegildo
Gourrier, S.
Keywords: Optoelectrònica
Matèria condensada
Optoelectronics
Condensed matter
Issue Date: 1986
Publisher: American Institute of Physics
Abstract: A detailed analysis of the photocapacitance signal at the near‐band and extrinsic energetic ranges in Schottky barriers obtained on horizontal Bridgman GaAs wafers, which were implanted with boron at different doses and annealed at several temperatures, has been carried out by using the optical isothermal transient spectroscopy, OITS. The optical cross sections have been determined as well as the quenching efficiency of the EL2 level which has been found to be independent of the annealing temperature. Moreover, the quenching relaxation presents two significant features: (i) a strong increase of the quenching efficiency from 1.35 eV on and (ii) a diminution of the quenching transient amplitude in relation with that shown by the fundamental EL2 level. In order to explain this behavior, different cases are discussed assuming the presence of several energy levels, the existence of an optical recuperation, or the association of the EL2 trap with two levels located, respectively, at Ev+0.45 eV and Ec−0.75 eV. The theoretical simulation, taking into account these two last cases, is in agreement with the experimental photocapacitance data at low temperature, as well as at room temperature where the EL2 filling phototransient shows an anomalous behavior. Moreover, unlike the previous data reported for the EL2 electron optical cross section, the values found using our experimental technique are in agreement with the behavior deduced from the theoretical calculation. The utilization of the OITS method has also allowed the determination of another level, whose faster optical contribution is often added to that of the EL2 level when the DLOS or standard photocapacitance is used.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.337255
It is part of: Journal of Applied Physics, 1986, vol. 60, num. 5, p. 1661-1669
Related resource: http://dx.doi.org/10.1063/1.337255
URI: http://hdl.handle.net/2445/32216
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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