Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32230
Title: Spectroscopic ellipsometry study of the In1-x Gax Asy P1-y / InP Heterojunctions grown by metalorganic chemical-vapor deposition
Author: Drévillon, B.
Bertran Serra, Enric
Alnot, P.
Olivier, J.
Razeghi, M.
Keywords: Pel·lícules fines
El·lipsometria
Thin films
Ellipsometry
Issue Date: 1986
Publisher: American Institute of Physics
Abstract: The dielectric functions of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.5P0.5 epitaxial layers have been measured using a polarization modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x ray photoelectron spectroscopy measurements. These reference data have been used to investigate the structural nature of metalorganic chemical vapor deposition grown In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP heterojunctions, currently used for photodiodes and laser diodes. The sharpness of the interfaces has been systematically compared for the two types of heterojunctions: In1 xGaxAsy/InP and InP/In1 xGaxAsyP1 y. The sharpest interface is obtained for InP growth on In0.75Ga0.25As0.5P0.5 where the interface region is estimated to be (10±10) Å thick. The importance of performing in situ SE measurements is emphasized.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.337603
It is part of: Journal of Applied Physics, 1986, vol. 60, num. 10, p. 3512-3518
Related resource: http://dx.doi.org/10.1063/1.337603
URI: http://hdl.handle.net/2445/32230
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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