Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/32235
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Andújar Bella, José Luis | - |
dc.contributor.author | Bertrán Serra, Enric | - |
dc.contributor.author | Canillas i Biosca, Adolf | - |
dc.contributor.author | Campmany i Guillot, Josep, 1966- | - |
dc.contributor.author | Morenza Gil, José Luis | - |
dc.date.accessioned | 2012-10-09T09:05:34Z | - |
dc.date.available | 2012-10-09T09:05:34Z | - |
dc.date.issued | 1991 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/2445/32235 | - |
dc.description.abstract | We present a study about the influence of substrate temperature on deposition rate of hydrogenated amorphous silicon thin films prepared by rf glow discharge decomposition of pure silane gas in a capacitively coupled plasma reactor. Two different behaviors are observed depending on deposition pressure conditions. At high pressure (30 Pa) the influence of substrate temperature on deposition rate is mainly through a modification of gas density, in such a way that the substrate temperature of deposition rate is similar to pressure dependence at constant temperature. On the contrary, at low pressure (3 Pa), a gas density effect cannot account for the observed increase of deposition rate as substrate temperature rises above 450 K with an activation energy of 1.1 kcal/mole. In accordance with laser‐induced fluorescence measurements reported in the literature, this rise has been ascribed to an increase of secondary electron emission from the growing film surface as a result of molecular hydrogen desorption. | - |
dc.format.extent | 3 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | American Institute of Physics | - |
dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.348470 | - |
dc.relation.ispartof | Journal of Applied Physics, 1991, vol. 69, num. 6, p. 3757-3759 | - |
dc.relation.uri | http://dx.doi.org/10.1063/1.348470 | - |
dc.rights | (c) American Institute of Physics , 1991 | - |
dc.source | Articles publicats en revistes (Física Aplicada) | - |
dc.subject.classification | Pel·lícules fines | - |
dc.subject.classification | Silici | - |
dc.subject.classification | Semiconductors amorfs | - |
dc.subject.other | Thin films | - |
dc.subject.other | Silicon | - |
dc.subject.other | Amorphous semiconductors | - |
dc.title | Effect of substrate temperature on deposition rate of rf plasma-deposited hydrogenated amorphous silicon thin films | eng |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 058305 | - |
dc.date.updated | 2012-10-09T09:05:34Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
058305.pdf | 300.16 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.